Abstract
Silicon
nanowires (SiNWs) have successfully been synthesized by carbothermal
evaporation method. By ramping-up the furnace system at 20 °C min−1
to 1100 °C for 6 h, the vertically aligned coexist with crooked SiNWs
were achieved on the silicon substrate located at 12 cm from source
material. The processing parameters such as temperature, heating rate,
duration, substrate position and location are very important to produce
SiNWs. Morphology and chemical composition of deposited products were
investigated by field-emission scanning electron microscopy (FESEM)
equipped with energy dispersive X-ray analysis (EDX). The existence of
small sphere silicon oxide capped nanowires suggested that the formation
of SiNWs was governed by oxide-assisted growth (OAG) mechanism.
Keywords
- Evaporation and sublimation;
- Silicon;
- Carbon;
- Silicon oxides;
- Nanostructures
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